The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.

Feature:

• High current (max. 800 mA)
• Low voltage (max. 40 V).

Application:

• Linear amplification and switching.
• •  Transistor Polarity: NPN
  •  Collector Emitter Voltage V(br)ceo: 30V
  •  Power Dissipation Pd: 500mW
  •  DC Collector Current: 800mA
  •  DC Current Gain hFE: 100
  •  Transistor Case Style: TO-18
  •  No. of Pins: 3
  •  Collector Emitter Voltage Vces: 400mV
  •  Continuous Collector Current Ic Max: 800mA
  •  Current Ic @ Vce Sat: 150mA
  •  Current Ic Continuous a Max: 800mA
  •  Current Ic hFE: 150mA
  •  Full Power Rating Temperature: 25°C
  •  Gain Bandwidth ft Min: 250MHz
  •  Gain Bandwidth ft Typ: 250MHz
  •  Hfe Min: 100
  •  No. of Transistors: 1
  •  Pin Configuration: a
  •  Power Dissipation Pd: 500mW
  •  Power Dissipation Ptot Max: 500mW
  •  Termination Type: Through Hole
  •  Voltage Vcbo: 60V

  Package Content:

  1 x 2n2222 Switching Transistor

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